A 50% efficiency InGaP/GaAs HBT power amplifier module for 1.95 GHz wide-band CDMA handsets

A 0.1 cc high-efficiency power amplifier multi-chip module (MCM) has been developed using InGaP/GaAs heterojunction bipolar transistors (HBTs) for 1.95 GHz wide-band CDMA handsets. Under 3.5 V operation, the MCM achieved an output power P/sub 0ut/ of 26.3 dBm, an excellent power-added efficiency (PAE) of 50.5%, and a high associated gain G/sub a/ of 28.5 dB with an adjacent channel leakage power ratio (ACPR) of -35 dBc at a 5 MHz off-center frequency band. The MCM also exhibited excellent PAEs of more than 40% even at a low supply voltage of 1.5 V.