Ultra-thin body PMOSFETs with selectively deposited Ge source/drain

Ultra-thin body (UTB) MOSFETs with body thickness down to 4 nm and LPCVD selectively deposited Ge raised source and drain (S/D) are demonstrated for the first time. Devices with gate length down to 30 nm show excellent short-channel behavior. Mobility enhancement and threshold-voltage shift due to the quantum confinement of inversion charge by the ultra-thin body are investigated.