Lateral unbalanced super junction (USJ)/3D-RESURF for high breakdown voltage on SOI

This paper examines for the first time the possibility of the Super Junction (SJ) concept to realise lateral device structures on SOI with high breakdown voltage and low on-resistance for use in power integrated circuits (PICs). More specifically, a novel structure based on an unbalanced SJ (USJ) configuration is proposed and investigated using the 3D-device simulator, DAVINCI. The physics of the SJ related structure is described in detail and is shown to rely on a truly three dimensional RESURF effect to achieve high voltage blocking capability-hence the acronym 3D-RESURF. It is also shown that a suitable choice of n and p stripe geometry, enables breakdown voltage in excess of 600 volts to be realised on SOI technology with 4 /spl mu/m of buried oxide (BOX). Methods for optimising the breakdown capability of the proposed structure are also presented.