Demonstration of a flash memory cell with 55 /spl Aring/ EOT silicon nitride tunnel dielectric

The authors demonstrate for the first time a flash memory cell with 55 /spl Aring/ Equivalent Oxide Thickness (EOT) silicon nitride tunnel dielectric. Their preliminary results show that this cell has good endurance characteristics and high program/erase speed. These results suggest that a high-quality JVD silicon nitride can be used as a long term solution to replace the tunnel oxide and to extend the scaling limit of tunnel dielectric in flash memory devices beyond the year 2010.