Study of Physical, Optical, and Electrical Properties of Cesium Titanium (IV)-Based Single Halide Perovskite Solar Cell

This article represents the study of physical, optical, and electrical properties Cesium Titanium (IV) based single halide Perovskite absorbing materials for the optimum photovoltaic application. The validity of the selected base parameters for the basic and absorbing materials of the proposed solar cell structure FTO/TiO
₂
/Cs
₂
TiX
₆
/CuSCN/Ag where X is Br
^-
, I
^-
, Cl
^-
, and F
^-
has been used for that study. This article using the solar cell capacitance simulator-one-dimension (SCAPS-1D), has revealed the optimal solar cell device performance for the Perovskite materials (Cs
₂
TiBr
₆
, Cs
₂
TiI
₆
, Cs
₂
TiCl
₆
, and Cs
₂
TiF
₆
) thickness at 1.5, 1.0, 1.0, and 2.5 μm, respectively. The optimum device temperature and absorbing layer defect density was found to be 20 °C and 10
¹⁰
cm
^-3
for all the four absorbing layer. The resonance time period and the indirect band gap for the Cs
₂
TiBr
₆
, Cs
₂
TiI
₆
, Cs
₂
TiCl
₆
, and Cs
₂
TiF
₆
absorbing layer-based solar cell device is 0.53, 0.51, 0.51, 0.40, and 2.2, 2.1, 2.9, and 2.6 eV, respectively.