DC conductivity of metal/DLC/Si/metal heterostructures

Electrical conduction of metal/DLC/silicon/metal heterostructures has been investigated, Both DLC/p-Si and DLC/n-Si systems shows rectifying properties. The current-voltage (I-V) characteristics of the heterostructures can be described well by the simplified diode equation with the ideality factor between 21.2 and 3.25, decreasing with increasing temperature. The directive tendency of I-V characteristics is independent of the type of silicon substrate. A simple qualitative band model of DLC/Si junction is proposed.