Solid state mass memories

Summary form only given. Rather than using the reversability of a magnetic memory cell, it is becoming necessary to develop a mass storage device with a very fast access time and a high execution speed, to the detriment of long-period storage. The purpose is to store 2-10 MB over more than 30-day periods. This type of memory shows dynamic characteristics similar to those of semiconductor memories. Three technologies that can be foreseen are discussed: (1) higher-capacity static RAMs with associated or hybrid batteries, (2) a DRAM-type memory cell, connecting a transistor to a condenser, and (3) Bloch line memory, a continued evolution of magnetic-bubble memories.<
>