Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes

In this work, the low-frequency noise (LFN) characteristics of the 3-terminal
${n}$
-type gated Schottky diode (GSD) were investigated. The GSD shows the 1/
${f}$
noise behavior, and the noise origin depends on the operating current (
${I}_{\text{D}}$
) of the GSD. The 1/
${f}$
noise is mainly generated by the barrier height fluctuation near the metal-semiconductor interface at the reverse Schottky diode (SD) in the low
${I}_{\text{D}}$
region, and by the carrier number fluctuation (CNF) at the
${n}$
-type FET in the high
${I}_{\text{D}}$
region. The LFN characteristics in the low
$I_{\text{D}}$
region are strongly affected by the temperature. With increasing temperature, the transition of the
$1/f$
noise origin from the reverse SD to the
$n$
-type FET occurs at lower
$I_{\text{D}}$
.