Double pocket architecture using indium and boron for sub-100 nm MOSFETs

A double pocket architecture for sub-100 nm MOSFET's is proposed on the basis of indium pocket profiling at higher dose than the amorphization threshold. At high dose, the low-energy indium pockets realize the improvement of short channel effects and shallow extension formation of a highly doped drain, maintaining the low junction leakage level. A double pocket architecture using indium and boron is demonstrated in a 70 nm gate length MOSFET with high drive currents and good control of the short channel effects.