A quasi-SOI power MOSFET for radio frequency applications formed by reversed silicon wafer direct bonding

A quasi-SOI power MOSFET for radio frequency (RF) applications was fabricated by reversed silicon wafer direct bonding (RSDB). Its breakdown voltage was more than twice that of the conventional SOI power MOSFET and its other dc characteristics were almost the same. Its maximum oscillation frequency was about 15% higher than that of the conventional SOI power MOSFET. The power-added efficiency (PAE) of the quasi- SOI power MOSFET was higher than the SOI one. It showed excellent PAE of 68% at a drain bias of 3.6 V.