High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

High quality interpoly dielectrics have been fabricated by using NH/sub 3/ and N/sub 2/O nitridation on polysilicon and deposition of tetra-ethyl-ortho-silicate (TEOS) oxide with N/sub 2/O annealing. The surface roughness of polysilicon is improved and the value of weak bonds is reduced due to nitrogen incorporation at the interface, which improves the integrity of interpoly dielectrics. The improvements include a higher barrier height, breakdown strength, and charge-to-breakdown, and a lower leakage current and charge trapping rate than counterparts. It is found that this method can simultaneously improve both charge-to-breakdown (up to 20 C/cm/sup 2/) and electric breakdown field (up to 17 MV/cm).