Highly reliable interconnect integration of Cu and low-k organic polymer based on fine CD controls

A Cu dual damascene interconnect with a low-k organic polymer was fabricated and CD changes of its vias and trenches were investigated. By means of optimizing both the SiO/sub 2/ etching condition and the SiN thickness in a stacked hard mask, CD changes of trenches from a designed pattern size to the final one were suppressed up to about 10 nm. As a result, electrical properties were controlled and kept close to calculated values from the designed pattern size. This synthetic process integration based on the fine CD control technique is promising for the realization of a fine dual damascene interconnect of 0.13-/spl mu/m and further technology node.