Cryogenic temperature dependence and modelling of RF-noise parameters of carbon doped InP/InGaAs HBT

The RF-performance of InP/InGaAs HBTs strongly depends on the ambient temperature. In this work we present the RF-noise parameters (minimum noise figure F/sub min/, equivalent noise resistance R/sub n/ and optimum generator reflection coefficient /spl Gamma/_/sub opt/) in dependence on bias condition and ambient device temperature in a range from 380 K down to 15 K. The measurement set-up used is described. Modelling of RF-parameters of carbon doped InP/InGaAs HBT is presented using a consistent small-signal and RF-noise parameter equivalent circuit.