Fabrication of MoS2/ZnO Hybrid Nanostructures for Enhancing Photodetection

In this article, the effect of MoS
₂
and ZnO blend ratio on the performance of MoS
₂
:ZnO hybrid photodiodes is investigated. The UV and visible performance parameters for five different devices consisting of semiconducting layers like MoS
₂
, ZnO, MoS
₂
:ZnO (1:1), MoS
₂
:ZnO (1:2), and MoS
₂
:ZnO (2:1) each are analyzed. The device MoS2:ZnO (1:2) shows the best performance in the UV region with a responsivity of 17.04 A/W, detectivity of 6.84 × 10
¹³
Jones and external quantum efficiency (EQE) of 6604% at 320nm, -1 V bias. On the other hand, the device MoS
₂
:ZnO (2:1) gives the best performance in the visible region with a responsivity of 2.27 A/W, detectivity of 0.60 × 1013 Jones, and EQE of 533% at 529nm, -1 V.