A modified BSIM 0.35 /spl mu/m MOSFET RF large-signal model for microwave circuit application

A modified 0.35 /spl mu/m gate-length MOSFET RF large signal model based on BSIM3v3 is presented in this report. The RF large signal model includes a BSIM3v3 model, and some passive components to simulate the device DC and RF characteristics. The added parasitic components are scaleable versus the device gate-width. A 2.4 GHz CMOS MMIC oscillator has been demonstrated based on these active models and on chip passive components.