How to monitor a sub-keV USJ implant

Next generation processes for USJ formation will use sub-keV implant conditions, e.g. /sup 11/B/sup +/ 500 eV 1/spl middot/10/sup 15/ cm/sup -2/. To achieve the shallowest junctions after annealing, flash anneals with very fast ramp up and ramp down rates and controlled gaseous ambient have to be applied. To guarantee repeatable process results for sub-keV implants, several parameters of the implanter and the RTP tool have to be controlled, e.g. the dose and energy of the implanter, the gas ambient and thermal budget repeatability of the RTP and the uniformity of both tools. For non-uniformity monitoring of a rapid thermal processing system (RTP) the implant conditions /sup 11/B/sup +/ 25 keV 3/spl middot/10/sup 15/ cm/sup -2/ are /sup 75/As/sup +/ 25 keV 1/spl middot/10/sup 16/ cm/sup -2/ are very valuable if the implants are performed with similar beam optics and the same scanning system. Since these conditions show small sheet resistance variations for small dose and energy variation, but are sensitive to RTA parameters such as temperature and ambient. These wafers, thus minimize the implanter variables while calibrating the RTP. Once the RTP system was calibrated, the implanter was calibrated and monitored by annealing /sup 11/B/sup +/ implanted wafers with 3 different energies of 500 eV/spl plusmn/100 eV and three doses of 5.4/spl middot/10/sup 14/ cm/sup -2/ with a maximum dose variation of 30%. Dose versus R/sub s/, dose versus junction depth and R/sub s/ versus O/sub 2/ concentration were analyzed to determine the implanter effect on the process reproducibility. Additionally, the Boin-Lerch Algorithm was applied to distinguish between the RTP and the implanter-induced uniformity.