Performance of IW-630 ion implanter for 300-mm wafers

While micro-fineness of semiconductor devices is taking place rapidly, improvements of ion implanters have also been made to achieve flexible use in advanced facilities. IW-630 is a 300-mm ion implanter that provides as small as 17.2 m/sup 2/ footprint, wide energy range and wide dosage range in order to satisfy the requirements in the advanced facilities. The energy range from 5 to 300 keV is achieved using single-charged ions. In high-energy implantation using multiple-charged ions, energy contamination is free by the final energy filter (collimator magnet) installed after post-acceleration. The implantation dose shift and the degradation of implantation uniformity by out-gassing from photo-resist, which mostly occurs at the time of implanting high-power beams, have been completely solved by ULVAC original cryo-pumping systems. So stable implantation characteristics have been achieved. In wafer handling, unlike the batch system or cassette-load lock system, the load-lock system adopted handles wafers one by one. The practical transfer system and the implant processing capacities realize 200 wafers/hr as the row throughput.