The Hitachi advanced implanter UI-6000 for SIMOX wafer production

To produce high quality SIMOX wafers of 200 mm or 300 mm in diameter with high throughput, an oxygen ion implanter, UI-6000, was newly designed and constructed. The implanter operated stably at the wafer temperatures of 500 to 650 /spl deg/C and gave 100 mA-class O/sup +/ current in the energy regions required for the low-dose SIMOX wafer fabrication process. The implant test showed that the clean and uniform implantation needed for next generation SIMOX-SOI device fabrication can be successfully realized with the UI-6000.