On the dominant interface trap generation process during hot-carrier stressing [MOSFETs]

The analysis of a kink observed in the charge pumping current versus stress time curve supports the recent claim of a new interface-trap generation mechanism during hot-carrier stress. The trap generation process, which relates to the interaction between hot carriers and the Si-SiO/sub 2/ interface, proceeds with a generation coefficient higher than those of hot-hole or hot-electron injection. With its dominance in the late stage, it is likely to limit the lifetime of N-MOSFETs under AC operation.