Ion milling properties of laterally emitting thin-film electroluminescent materials

A study has been undertaken of the ion milling properties of ZnS:Mn, Y/sub 2/O/sub 3/, Si/sub 3/N/sub 4/, SiO/sub 2/, SiO/sub x/N/sub y/, and Al versus the etching time, the acceleration voltage, and the angle of incidence of the ion beam. Different ZnS:Mn etched profiles have been fabricated by modifying the angle of incidence; these are in agreement with the reported simulations.