Effect of Nanostructure on Carrier Transport Mechanism of III-Nitride and Kesterite Solar Cells: A Computational Analysis

In this work, the computational analysis on use of nanostructures to both III-Nitride and Kesterite solar cell are presented and compared. The scope behind the comparative analysis of III-nitride and kesterite material based solar cells is due to their excellent material properties, which made them suitable as an absorber for solar cells. In III-nitride based solar cells, stress induced polarization charges play an important role in carrier dynamics of cell, whereas, kesterite based cells suffer from detrimental effect due to its in-house defects. Here, an analysis is carried out to understand the above mentioned important effects, i.e., carrier transport mechanisms under the influence of polarization charges in III-nitride materials and in presence of defects in kesterite materials with nanostructures. It is anticipated that, nanostructures provide lots of advantages over bulk layer in order to overcome the detrimental effects in solar cells. A detailed comparative analysis of both type of solar cells are carried out. Finally, quantum efficiency measurement is carried out in order to observe the range of light absorption in each structures. It is quite interesting to observe that nanostructure doesn't boost the performance of the solar cell unless until the device is engineered properly. It is purely depends on carrier recovery and transport from the nanostructures.