Characterizations of CeO/sub 2/ and BaTiO/sub 3/ double buffer layer for the growth of Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-x/ superconducting thin film

High quality Y
₁
Ba
₂
Cu
₃
O
_7-x
(Y-Ba-Cu-O) superconducting thin films have been grown on metallic Hastelloy(Ni-Cr-Mo alloys) substrates with Ce0
₂
, BaTi0
₃
, and Ce0
₂
/BaTiO
₃
buffer layers in-situ by pulsed laser deposition. Ce0
₂
layer revealed that (200) XRD peak became dominant at a specific deposition temperature but the grain size of that film was observed to be small. BaTi0
₃
has shown larger grain size than that of CeO
₂
by 200 times. Two buffer layers have been integrated to enhance the superconducting properties of Y-Ba-Cu-0 thin film on metallic substrate. This Y-Ba-Cu-O/Ce0
₂
/BaTiO
₃
on metallic substrate shows enhanced superconducting properties of the transition temperature of 85 K and the critical current density of about 8.4 × 10
⁴
A/cm
²
measured at 77 K mainly due to the enlargement of the grain size of Y-Ba-Cu-0 film with double buffer layer.