Microwave characteristics of meander inductors fabricated by 3D self-assembly

A new self-assembly process is presented which allows the fabrication of 3-dimensional metal structures in a fully parallel low temperature process. The fabrication method is suitable as a post-process so as to integrate inductors on radio- and microwave frequency ICs, with the aim of reducing losses and parasitic capacitance by separating the coil from the substrate. Meandered microwave inductors have been fabricated on a low resistivity silicon substrate, and a peak Q of 11 was measured for a 2 nH inductor, compared to a peak Q of 4 for the same structure in proximity to the substrate.