Reliability of thin oxides grown on deuterium implanted silicon substrate

We have investigated the reliability of gate oxide with deuterium incorporated at the Si/SiO/sub 2/ interface through low energy ion implantation into the silicon substrate before thin gate oxide growth. Deuterium implantation at a dose of 1/spl times/10/sup 14//cm/sup 2/ at 25 keV showed improved breakdown characteristics. Charge-to-breakdown seems to correlate well with the interface state density measured by the conductance method.