Body bias dependence of 1/f noise in NMOS transistors from deep-subthreshold to strong inversion

Dependence of 1/f noise on the body-to-source junction bias voltages (V/sub BS/) between -2.5 and 0.5 V for 0.25-/spl mu/m NMOS transistors is reported. In subthreshold, 1/f noise is reduced by about one order of magnitude, when the body-to-source junction is forward biased by 0.5 V (V/sub BS/) compared to that for V/sub BS/=0 V, which is due to increased depletion layer capacitance as well as possibly due to an increased average distance between oxide traps and carriers caused by the forward bias. On the contrary, in strong inversion, 1/f noise remains almost constant for the entire V/sub BS/ range.