Estimation of initial growth process of microcrystalline silicon thin film using double layered structure

Hydrogenated microcrystalline silicon (/spl mu/c-Si:H) films of single- and double-layered structures have been formed at different microwave powers and hydrogen dilution ratios on hydrogen-radical CVD method. The films have been analyzed using X-ray diffraction measurements (XRD), the E/sub 2/ peak intensity of ultraviolet reflectance and electrical conductivity. It was clarified that crystallinity of the upper growth layer is affected strongly by that of the lower initial layer and consequently it controls electrical conductivity. These results suggest that in continuous deposition of /spl mu/c-Si:H the same effects can be caused even if deposition conditions are changed during deposition.