IGBT model validation for soft-switching applications

Techniques are described for validating the performance of insulated gate bipolar transistor (IGBT) circuit simulator models for soft-switching circuit conditions. The circuits used for the validation include a soft-switched boost converter similar to that used in power-factor correction, and a new half-bridge testbed that is specially designed to examine the details of IGBT soft-switching waveforms. The new testbed is designed to emulate the soft-switching circuit conditions of actual applications circuits, while allowing the easy change of IGBT operating conditions. The testbed also eliminates the problems of commutating diode noise and IGBT temperature rise found in actual application circuits. Simulations of IGBT models provided in circuit simulator component libraries are compared with measurements obtained using these test circuits for the soft-switching conditions of zero-voltage turn-on, zero-voltage turn-off, or zero-current turn-off. Finally, the results are summarized by comparing the switching energies for the various measurements and simulations presented in this work.