Application of second harmonic generation to express local monitoring of semiconductor and dielectric crystal parameters

Physical and technical characteristics and possibilities of express, nondestructive, compatible with the existent technologies, computerized setup for ex-situ second harmonic generation diagnostics of crystal quality of semiconductor and dielectric plates and films without the center of symmetry (GaAs, CdTe, SBN) are presented. Brief characteristics of similar laboratory installation for in-situ express second harmonic generation diagnostics of semiconductor films crystal quality are given. The "ex-situ" setup is able to define the axes orientation with the accuracy about 0,1 degree by the analysis of the SH intensity dependence versus laser light polarization rotation with the space resolution up to 40 microns, operation time about 1 minute. It produces simultaneously the map of surface layer crystal quality distributions and the map of volume crystal and optical quality distributions. By this operation the thickness of studied surface layer 0,1-1 micron, the size of scanned area from 0,5/sup */0,5 mm/sup 2/ up to 60/sup */60 mm/sup 2/, number of map elements 100/sup */100, space resolution up to 40 microns, time of maps generation about 15 minutes. The demonstrated possibilities of SH testing of GaAs, CdTe, SBN quality give a chance to have convenient, express and technological tool for the laboratory and factory output inspection.