The model of process of low-temperature plasmachemical treatment of units of CRPhED

The application of the model of plasma gap for process of low-temperature plasmachemical treatment of units of cathode-ray and photoelectronic devices (CRPhED) is considered. The model allows to consider potential distribution in the gap as similar to potential distribution without plasma. The model gives the possibility to calculate potential on the electrodes, necessary for the quality cleaning of workpieces.