Program word-line voltage generator for multilevel flash memories

A program word-line voltage generator for multilevel flash memories is presented. It includes a voltage regulator using a programmable resistive feedback network to generate the staircase waveform required for adequate programming accuracy, and a high-swing controlled discharge circuit to minimize the settling time of program and verify pulses. The same generator provides the voltage required in read and in program mode, thus saving silicon area and minimizing current consumption. Experimental results of the proposed circuit integrated in a 4-level-cell 64 Mb flash memory are presented.