Millimeter-wave characteristics of SiGe heterojunction bipolar transistors and monolithic interconnects in silicon technologies

Accurate measurements are needed to validate wideband active and passive models for silicon-based circuits aimed at millimeter-wave applications, such as 40GB/s datacomm and 26-28GHz (LMDS) broadband wireless systems. This wideband characterization of SiGe heterojunction bipolar transistors (HBTs) and interconnects uses a time-resolved, laser-based electro-optic sampling (EOS) technique and numerical de-embedding.