High-voltage (600 to 3 kV) silicon carbide diode development

The design, fabrication and testing of silicon carbide rectifiers are examined. Both Schottky (600 V to 1 kV) and junction barrier Schottky (JBS) (1 kV to 3 kV) diodes are investigated in terms of practical design, manufacturing and cost issues. Emphases on material quality and edge termination techniques for large scaleable devices are discussed. Using high quality epitaxial layers and both implanted guard ring, and implanted single-zone junction termination extension (JTE) edge termination techniques, 1 kV Schottky and 2.5 kV JBS diodes are demonstrated.