Whole Metal Oxide p-i-n Deep Ultraviolet Light-Emitting Diodes Using i-Ga₂O₃ Active Emissive Film

In this work, whole transparent p-NiO/i-Ga
₂
O
₃
/n-Ga
₂
O
₃
:Si deep ultraviolet light-emitting diodes (DUV-LEDs) were fabricated and studied. The p-NiO film was deposited using a radio frequency magnetron sputtering system. The i-Ga
₂
O
₃
film and the n-Ga
₂
O
₃
:Si film were deposited using a vapor cooling condensation system at about 80 K and then annealed in an oxygen ambience at 900 °C for 60 minutes. Due to the significantly reduced oxygen vacancies and intrinsic defects resided in the i-Ga
₂
O
₃
active emissive film, UV-C LEDs were obtained. By measuring the electroluminescence spectrum of the p-i-n DUV-LEDs, the peak wavelength of 240.0 nm and the half width at half maximum of 20.2 nm were obtained.