LSF technique to analyze intrinsic TDDB failures of gate oxides

The exact least square fit (LSF) technique assuming quadratic dependence on E/sub OX/ and 1/T is applied to analyze the published experimental TDDB data of MOS gate oxides. The E/sub OX/ and 1/T dependence is found more complicated than the simple E model suggests. The linear E/sub OX/ dependence of E/spl alpha/ and the linear 1/T dependence of Gamma is confirmed, and the disagreement with the original papers is discussed. The E model is preferred in the measured E/sub OX/ and 1/T region, but, by extrapolation, the 1/E dependence may have merit at specific regions.