Laterally driven electrostatic repulsive-force microactuators using asymmetric field distribution

We present a new electrostatic actuation method using a lateral repulsive-force induced by an asymmetric distribution of planar electrostatic field. The lateral repulsive-force has been characterized by a simple analytical equation, derived from a finite element simulation. Quality-factors are estimated from the computer simulation based on creep flow model. A set of repulsive-force polycrystalline silicon microactuators has been designed and fabricated by a four-mask surface-micromachining process. Static and dynamic response of the fabricated microactuators has been measured at the atmospheric pressure for the driving voltage range of 0-140 V. The static displacement of 1.27 /spl mu/m is obtained at the dc voltage of 140 V. The resonant frequency of the repulsive-force microactuator increases from 11.7 kHz to 12.7 kHz when the dc induction voltage increases from 60 V to 140 V. The measured quality-factors are increased from 12 to 13 in the voltage range of 60-140 V. Fundamental characteristics of the force, frequency and quality-factor of the electrostatic repulsive-force microactuator have been discussed and compared with those of the conventional electrostatic attractive-force microactuator.