Selective preparation of single-phase boron-rich silicon borides films by pulsed Nd:YAG laser ablation method

Summary form only. We report a successful selective preparation of single-phase boron-rich silicon boride (SiB) films for thermo-electric energy conversion device by pulsed Nd:YAG laser ablation method. In this process, SiB films on silicon substrate were produced by a pulsed laser ablation method in 10 mtorr argon gas. X-ray diffraction patterns and electron probe micro analyzer (EPMA) analysis of deposited films show single-phase composition.