Mapping piezoelectric field distribution in InGaN/GaN multiple-quantum-wells by scanning second-harmonic-generation microscopy

Summary form only given.III-V nitrides are key materials for optoelectronics operating in the green-ultraviolet (UV) wavelength range. The optical behaviors of the InGaN MQWs were found to be strongly shaped by the large piezoelectric field on the order of 1 MV/cm through the quantum confined Stark effect and the quantum confined Franz-Keldysh effect. In this presentation, we demonstrate the mapping of the piezoelectric field intensity in InGaN-GaN MQWs with high resolution scanning second-harmonic-generation (SHG) microscopy.