An ultra-low DC power ultra-flat multi-octave MHEMT LNA MMIC

An ultra-wideband ultra-flat ultra-low DC power consumption low noise amplifier MMIC using metamorphic InAlAs/InGaAs HEMT technology has been developed. The amplifier demonstrated a record 2.7 octave bandwidth of 1.7 to 11 GHz, with a record /spl plusmn/0.6 dB of gain ripple. The associated gain was 16.4 dB and the noise figure varied between 0.84 dB and 1.5 dB. The DC power consumption was only 10 mW. These first pass results represent state-of-the-art performance figures for wideband LNAs.