Millimeter-wave bandwidth, SiGe-HBT travelling wave amplifier

One Dimensional, three stage Travelling Wave amplifier structures have been designed and manufactured in Hitachi's 100-GHz SiGe-HBT technology. Measurements show that the circuits exhibit a bandwidth of about 67 GHz with 6 dB of gain. The circuit is operational at 3.3 V supply voltage consuming 23 mA current. The chip area is approximately 1/spl times/1 mm/sup 2/.