Physically Transient W/ZnO/MgO/W Schottky Diode for Rectifying and Artificial Synapse

Herein, physically transient Schottky diode with a structure of W/ZnO/MgO/W was proposed. By insert of 5 nm MgO layer between ZnO and W, Schottky barrier diode with rectification ratio of 7.8×10
³
at ±1.5 V and a current density of 1780 mA/cm
²
is obtained. In addition, the AC rectification frequency exceeds 1 MHz is observed. Meanwhile, stable resistive switching (RS) memory with remarkable performance and typical synapse functions have also been observed by applying a larger forming voltage. Additionally, the dissolution tests of ZnO, MgO and W films in deionized water (DI) demonstrate physically transient nature of the devices. The proposed transient W/ZnO/MgO/W Schottky diode provides the feasibility to control the functional for target use which have great potential for security computing systems, environmental friendly electronics, and biological integrated interfaces application.