High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors

This article presents the small-signal and noise characterization of different technologies based on chemical vapor deposition (CVD) and silicon-carbide (SiC) graphene field-effect transistors (GFETs). The noise model, built on noise figure measurements under 50 Ω using the F
₅₀
method, was verified by additional source-pull measurements, with special care for the GFET stability. The four noise parameters were then extracted by using the validated F
₅₀
model up to 18 GHz, and the correlations between noise and small-signal parameters were shown for two different configurations: top-gated and back-gated GFETs.