Application of metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor technology to active-matrix organic light-emitting diode displays

Active matrix (AM) flat-panel displays (FPDs) based on organic light-emitting diodes (OLEDs) are being hotly pursued as alternatives to liquid crystal displays (LCDs). Unlike LC pixels, which are voltage-driven, OLED pixels are current-driven, Since the amorphous silicon (a-Si) thin-film transistors (TFTs) typically used in LCDs suffer from limited current-driving capability and high photosensitivity, polycrystalline silicon (poly-Si) TFTs based on metal-induced unilateral crystallization (MIUC) of a-Si are investigated for AMOLED displays. Particular attention is paid to (1) optimizing TFT structural design and (2) resolving issues related to the integration of MIUC TFT and OLED.