Analysis on Temperature Dependence of Hot Carrier Degradation by Mechanism Separation

Temperature dependence under various HCD conditions was analyzed in 14 nm node FinFETs. Unlike oxide traps, interface traps show different temperature dependence depending on HCD voltage conditions. Therefore, the interface traps were separated into three components and the temperature dependence was analyzed for each component. Multiple particle process (MP) and Field enhanced thermal degradation process (FP) have a constant temperature dependence regardless of voltage conditions. On the other hand, the temperature dependence of Single particle process (SP) varies depending on the voltage condition because SP is affected by scattering. However, the components of the interface traps in at nominal operating voltage changes since self-heating effect is different comparing the accelerated voltage. Therefore, we predicted the ratio of each component under nominal operating condition.