CdTe detectors' response to irradiation with high-energy gamma-rays

In recent years the performance of room-temperature semiconductor detectors such as CdTe has improved and they are now suitable candidates for several applications. However, some key parameters that can severely affect such performances have not been measured in detail yet. We have extended previous studies on the radiation damage of a set of CdTe detectors irradiated in a /sup 60/Co gamma-cell in a wide range of doses. A full characterization of the performance of irradiated detectors has been obtained by means of spectroscopic, electrostatic, photo-induced current transient spectroscopy and photo-deep level transient spectroscopy measurements to quote the energy resolution, the leakage current, the activation energy and capture cross-section of deep level defects, respectively.