Application of laser testing in study of SEE mechanisms in 16-Mbit DRAMs

A laser experiment has been carried out on the SMJ416400 and LUNA-E 16Mbit DRAMs in order to identify the mechanism leading to severe row/column errors. The error signatures observed with heavy ions are reproduced, related to physical locations on the die and the conditions of occurrence are studied (temporal behavior...). The question of laser to ion equivalence is discussed.