Total dose performance at 77 K of a radiation hard 0.35 /spl mu/m CMOS SOI technology

This paper is the first demonstration that a 0.35 /spl mu/m CMOS technology designed to be radiation hard at room temperature is total ionizing dose radiation hard at 77 K to 1 Mrd (SiO/sub 2/). We compare radiation results from 0.35 /spl mu/m n-FET's irradiated with /sup 60/Co gamma rays at both 77 K and 300 K. We have demonstrated that interface traps play no appreciable role in the radiation performance of this technology at cryogenic temperatures.