An accurate Coulomb mobility model for MOS inversion layer and its application to NO-oxynitride devices

In this paper, a new mobility model for device simulation is presented that incorporates Coulomb scattering due to ionized impurities in the MOS inversion layer. It is well known that the Coulomb scattering strongly depends on carrier concentration because of the screening effect. A crucial technique is used in the modeling procedure, with which a local dependency of the mobility on carrier concentration is derived from the experimental data of the effective mobility. Consequently, the present model has the ability to reproduce the experimental effective mobility over a wide range of impurity concentration with a single parameter set. Comparisons of the simulated and measured I/sub DS/-V/sub GS/ curves show good agreement for 0.15 /spl mu/m CMOS devices having pure SiO/sub 2/ and NO-based oxynitride gate oxides.