Silicon carbide IMPATT oscillators for high-power microwave and millimeter-wave generation

A large-signal simulation study has been performed on 4H-SiC IMPATT oscillators. Peak power capability of more than 1 kilowatt, with greater than 15% power efficiency, was predicted for both Ka-band and X-band SiC IMPATT diodes. Prototype devices with single-drift regions and hi-lo doping profiles have been designed and fabricated. The first working SiC IMPATT oscillator has been demonstrated.