A capacitance model for GaAs MESFETs

A capacitance model for a GaAs MESFET suitable for implementation in the circuit analysis program SPICE is presented. The model consists of nonlinear capacitances that are a function of two voltages. Such a model gives rise to ordinary nonlinear capacitances and transcapacitances. The placement of these elements in the Y matrix is shown. The empirical equations for the gate charge of a GaAs MESFET given provide an accurate SPICE model for the gate charge and capacitances of a MESFET. A comparison of measured capacitance values with the modeled values gives close enough agreement for circuit simulation purposes.<
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