A 5-ns GaAs 16-kb SRAM

A GaAs 4 K*4-b static-Ram (SRAM) with high speed and high reliability has been developed for practical systems. By adopting a novel basic circuit technique to the peripheral circuits, the RAM operates over a wide temperature range. By using a novel memory cell, the soft-error rate is reduced to less than that of commercial silicon emitter-coupled-logic (ECL) RAMs. Furthermore, by adopting a triple-level interconnection process, the chip area is reduced to 58% of that using a double-level one. The RAM operates at a single supply voltage of 1.8 V. At an ambient temperature of between 25 and 100 degrees C, the RAM is guaranteed a 5.0-ns access time, 2.0-W power dissipation, and +or-0.1-V supply voltage tolerance.<
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